Smartphones contain billions of small switches called transistors that allow us to handle countless tasks in addition to making calls – sending text, navigating the community, capturing selfies and Google search names. These switches include a conductive channel whose conductivity can be varied by a gate terminal that is separated from the channel by a dielectric film that is only 5 to 6 atoms thick.
According to Moore's Law, transistors have been miniaturized over the past 50 years, and the number of transistors on the chip has been observed to double every 18 months, while the cost has been cut in half. But we have now reached the point where the transistor cannot continue to expand.
In the Journal of AIP Press Applied Physics Letters the researchers reviewed negative-capacitance field-effect transistors (NC-FETs), a new device concept that shows that traditional transistors can be simple The method of increasing efficiency adds a thin layer of ferroelectric material. If it works, the same chip can count more, but requires less battery charging.
The physical properties of the technology are being evaluated worldwide, and in their article, the researchers summarized the latest work of NC NC and the need for self-consistent and coherent interpretation of various experiments. Reported in the literature.
"NC FETs were originally proposed by my colleague Professor Supriyo Datta and his graduate student Sayeef Salahuddin, who is now a professor at the University of California at Berkeley," said Muhammad Ashraful Alam, professor of electrical and computer engineering at Purdue University. the University.
From the beginning, Alam discovered the concept of NC-FETs is interesting – not only because it solves the pressing problem of finding new electronic switches for the semiconductor industry, but also because it is widely known as a wide range of phase-change devices called "Landau". switch".
"Recently, when my colleague and co-author Professor Peide Ye began experimenting with these transistors, this was an opportunity to work with him to explore the profoundly interesting features of this device technology," Alam said. "Our article summarizes our "theorists – experimentalists" on this topic."
Although hundreds of papers have been published in the paper, the researchers say that the validity of quasi-static NCs and the frequency reliability limitations of NC-FETs remain controversial.
If it is finally proven and integrated into modern integrated circuits, the impact of NC-FET transistors will be transformative. “Given the potential, a systematic analysis of equipment concepts is needed,” says Ye. “We found that the data for each group was widely distributed, and researchers were using very different techniques to describe their devices. This required a comprehensive analysis of existing data sets.”
Researchers hope that their work will bring communities together and propose ways to coordinate progress towards this promising technology.
Materials are provided by American Physical Society . Note: Content can be edited for style and length.
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